 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES * Low leakage level (typ. 500 fA) * High gain * Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS * Impedance converters in e.g. electret microphones and infra-red detectors * VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g DESCRIPTION source drain gate handbook, halfpage 2 BF545A; BF545B; BF545C 1 g d s 3 Top view MAM036 Marking codes: BF545A: M65. BF545B: M66. BF545C: M67. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF545A BF545B BF545C Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 C VGS = 0; VDS = 15 V ID = 1 A; VDS = 15 V VGS = 0; VDS = 15 V 2 6 12 - 3 6.5 15 25 250 6.5 mA mA mA mW mS CONDITIONS - -0.4 MIN. MAX. 30 -7.8 UNIT V V 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage gate-drain voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 25 C; note 1 open drain open source CONDITIONS BF545A; BF545B; BF545C MIN. - - - - - -65 - MAX. 30 -30 -30 10 250 150 150 V V V UNIT mA mW C C 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. handbook, halfpage 400 MBB688 Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb (C) Fig.2 Power derating curve. 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient; note 1 BF545A; BF545B; BF545C VALUE 500 UNIT K/W 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF545A BF545B BF545C ID = 1 A; VDS = 15 V IDSS drain current BF545A BF545B BF545C IGSS gate leakage current VGS = -20 V; VDS = 0 VGS = -20 V; VDS = 0; Tj = 125 C yfs yos forward transfer admittance common source output admittance VGS = 0; VDS = 15 V VGS = 0; VDS = 15 V VGS = 0; VDS = 15 V 2 6 12 - - 3 - - - - -0.5 - - 40 6.5 15 25 -1000 -100 6.5 - mA mA mA pA nA mS S CONDITIONS ID = 200 A; VDS = 15 V -0.4 -1.6 -3.2 -0.4 - - - - -2.2 -3.8 -7.8 -7.5 V V V V MIN. -30 - TYP. - MAX. V UNIT gate-source breakdown voltage IG = -1 A; VDS = 0 1996 Jul 29 4 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors DYNAMIC CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL Cis Crs gis gfs grs gos PARAMETER input capacitance reverse transfer capacitance BF545A; BF545B; BF545C CONDITIONS VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz 3 TYP. 1.7 0.8 0.9 15 300 2 1.8 -6 -40 30 60 UNIT pF pF pF pF S S mS mS S S S S common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz common source transfer conductance common source reverse conductance common source output conductance VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz handbook, halfpage 30 MBB467 handbook, halfpage 6 MBB466 IDSS (mA) 20 Yfs (mS) 5 10 0 0 -2 -4 -6 -8 VGSoff (V) 4 0 -2 -4 -6 -8 VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.4 Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. 1996 Jul 29 5 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C handbook, halfpage 80 MBB465 handbook, halfpage 300 MBB464 Yos (S) RDSon () 200 40 100 0 0 -2 -4 -6 -8 VGSoff (V) 0 0 -2 -4 -6 -8 VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 C. VDS = 100 mV; VGS = 0; Tj = 25 C. Fig.5 Common-source output admittance as a function of gate-source cut-off voltage; typical values. Fig.6 Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. handbook, halfpage 6 MBB462 handbook, halfpage 6 MBB463 ID (mA) 4 VGS = 0 V ID (mA) 4 -0.5 V 2 -1.0 V 2 0 0 4 8 12 VDS (V) 16 0 -3 -2 -1 VGS (V) 0 Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.7 Typical output characteristics; BF545A. Fig.8 Typical input characteristics; BF545A. 1996 Jul 29 6 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C handbook, halfpage 16 MBB460 handbook, halfpage 16 MBB459 ID (mA) 12 VGS = 0 V -0.5 V -1 V -1.5 V ID (mA) 12 8 8 4 -2 V -2.5 V 4 0 0 4 8 12 V 16 DS (V) 0 -6 -4 -2 VGS (V) 0 Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.9 Typical output characteristics; BF545B. Fig.10 Typical input characteristics; BF545B. handbook, halfpage 30 MBB457 handbook, halfpage 30 MBB456 ID (mA) VGS = 0 V 20 -1 V -2 V 10 -3 V -4 V -5 V 0 0 4 8 12 VDS (V) 16 ID (mA) 20 10 0 -8 -6 -4 -2 VGS (V) 0 Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.11 Typical output characteristics; BF545C. Fig.12 Typical input characteristics; BF545C. 1996 Jul 29 7 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C 103 handbook, halfpage I D (A) 102 MBB461 103 handbook, halfpage I D (A) 102 MBB458 10 10 1 10-1 10-2 10-3 -3 1 10-1 10-2 10-3 -6 -2 -1 VGS (V) 0 -4 -2 VGS (V) 0 VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.13 Drain current as a function of gate-source voltage; typical values for BF545A. Fig.14 Drain current as a function of gate-source voltage; typical values for BF545B. 103 handbook, halfpage I D (A) 102 MBB455 -102 handbook, halfpage IG (pA) -10 MBB454 ID = 10 mA 10 1 mA IGSS 10-1 -10-1 10-2 10-3 -8 -10-2 0 10 VDG (V) 20 0.1 mA 1 -1 -6 -4 -2 VGS (V) 0 VDS = 15 V; Tj = 25 C. ID = 10 mA only for BF545B and BF545C; Tj = 25 C. Fig.15 Drain current as a function of gate-source voltage; typical values for BF545C. Fig.16 Gate current as a function of drain-gate voltage; typical values. 1996 Jul 29 8 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C -103 handbook, halfpage IGSS (pA) -102 MBB453 handbook, halfpage 1 MBB452 Crs (pF) -10 0.5 -1 -10-1 -50 0 50 100 Tj (C) 150 0 -10 -5 VGS (V) 0 VDS = 0; VGS = -20 V. VDS = 15 V; Tj = 25 C. Fig.17 Gate current as a function of junction temperature; typical values. Fig.18 Reverse transfer capacitance as a function of gate-source voltage; typical values. handbook, halfpage 3 MBB451 102 handbook, halfpage yis (mS) 10 MBB468 Cis (pF) 2 bis 1 1 10-1 gis 0 -10 -5 VGS (V) 0 10-2 10 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 C. VDS = 15 V; Tj = 25 C. Fig.19 Typical input capacitance. Fig.20 Common-source input admittance; typical values. 1996 Jul 29 9 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C 10 2 handbook, halfpage Yfs (mS) MBB469 handbook, halfpage 10 MBB470 yrs (mS) 1 -brs 10 10-1 g fs 1 -b fs 10-2 -grs 10 -1 10 102 f (MHz) 103 10-3 10 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 C. VDS = 10 V; ID = 1 mA; Tamb = 25 C. Fig.21 Common-source forward transfer admittance; typical values. Fig.22 Common-source reverse transfer admittance; typical values. handbook, halfpage 10 MBB471 yos (mS) 1 bos 10-1 gos 10-2 10 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 C. Fig.23 Common-source output admittance; typical values. 1996 Jul 29 10 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors PACKAGE OUTLINE BF545A; BF545B; BF545C handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.24 SOT23. 1996 Jul 29 11 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF545A; BF545B; BF545C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 12 |
Price & Availability of BF545A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |